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Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

100%

Kundrotas J., Čerškus A., Liberis J., Matulionis A., Leach J., Morkoç A.

Acta Physica Polonica A

2011

vol. 119

issue 2

173-176

A study of the photoluminescence properties of AlInN/GaN in comparison with the spectrum of the GaN active layer of the same heterostructure is presented. The strong intensity lines of the observed photoluminescence spectra are associated with the formation, enhancement and narrowing of the excitonic lines in the flat band region of the active GaN layer. The phenomena in the presence of electric field near the heterostructure interface with the two-dimensional electron system are associated with nonlinear behaviour of recombination processes.

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

84%

Matulionis A., Liberis J., Matulionienė I., Šermukšnis E., Leach J., Wu M., Ni X., Morkoç H.

Acta Physica Polonica A

2011

vol. 119

issue 2

225-227

Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.

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2 Acta Physica Polonica A

2 2011

2 Leach J.

2 Liberis J.

2 Matulionis A.

1 Kundrotas J.

1 Matulionienė I.

1 Morkoç A.

1 Morkoç H.

1 Ni X.

1 Wu M.

1 Čerškus A.

1 Šermukšnis E.

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Enhancement and Narrowing of Excitonic Lines in AlInN/GaN Heterostructures

Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay