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Role of Ionic Processes in Degradation of Wide-Gap II-VI Semiconductor Materials

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Borkovskaya L., Dzhymaev B., Korsunskaya N., Markevich I., Singaevsky A., Sheinkman M.
Acta Physica Polonica A
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1998
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vol. 94
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issue 2
255-259
EN
A role of mobile defects in processes responsible for II-VI compound semiconductor characteristic instability is under consideration. These defects have been shown to be responsible for electron-enhanced reactions in these materials, in particular, shallow donor creation in CdS crystals. Accumulation of mobile defects near dislocations results in some specific effects: anisotropy of conductivity induced by electric field and distortion of edge emission spectrum shape. These effects side by side with electron-enhanced defect reactions have been found to influence considerably semiconductor device characteristics.
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