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  1. 1 Acta Physica Polonica A

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  1. 1 2011

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  1. 1 Berkutov I.

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Low Temperature Overheating Effect in SiGe p-Type Quantum Wells. Methods of the Hole-Phonon Energy Relaxation Time Determination

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Berkutov I.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 2
228-230
EN
The temperature dependence of the hole-phonon energy relaxation time τ_{hph} (T) under hot-hole conditions was studied in SiGe p-type quantum wells. The hot-hole temperature T_{h} was estimated through three different experimental methods: (i) from a comparison of the amplitude of the Shubnikov-de Haas oscillations changed by current and temperature; (ii) from a comparison of the phase relaxation time in the effect of weak localization obtained either at different temperatures and minimum current or at different current at a fixed temperature; (iii) from a comparison of the temperature and current dependences of the sample resistance. The values of T_{h} obtained by all three different methods were used to calculate, from the heat balance equation, the temperature dependence of the hole-phonon energy relaxation time τ_{hph} (T). All three temperature dependences τ_{hph} (T) were almost identical and demonstrated transition of the 2D system from "partial inelasticity" to small angle scattering at lower temperatures.
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