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Surface Composition of CIS Compound Affected by Xe⁺ Irradiation

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Tashlykov I., Zukowski P., Silvanovich D., Gremenok V.
Acta Physica Polonica A
|
2015
|
vol. 128
|
issue 5
927-930
EN
The paper presents the results of investigation of element composition of CuInSe₂ (CIS) compounds obtained by vertical Bridgman technique and on a glass substrate by the thermal deposition of Cu-In thin films with the subsequent annealing in selenium vapour. The depth profile distribution of elements in these samples using the Rutherford backscattering spectrometry/channeling technique in conjunction with the RUMP code simulation is also discussed.
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