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Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy

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Mowbray D. J., Fry P. W., Skolnick M. S., Itskevich I. E., Harris L., Ashmore A. D., Finley J. J., Wilson L. R., Schumacher K. L., Barker J. A., O'Reilly E. P., Al-Khafaji M., Cullis A. G., Hopkinson M., Clark J. C., Hill G.

Acta Physica Polonica A

2000

vol. 98

issue 3

279-293

The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots, in-plane wave function anisotropies and the modal gain of a quantum dot laser are determined.

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1 Acta Physica Polonica A

1 2000

1 Al-Khafaji M.

1 Ashmore A. D.

1 Barker J. A.

1 Clark J. C.

1 Cullis A. G.

1 Finley J. J.

1 Fry P. W.

1 Harris L.

1 Hill G.

1 Hopkinson M.

1 Itskevich I. E.

1 Mowbray D. J.

1 O'Reilly E. P.

1 Schumacher K. L.

1 Skolnick M. S.

1 Wilson L. R.

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Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy