The Hall effect of GdB_{6} has been studied on high quality single crystals in the temperature range 2-150 K and in magnetic field of 1 T. The obtained data allow to detect anomalies in the antiferromagnetic (AF) phase including (i) a drastic enhancement of negative Hall coefficient below T_{N1} ≈ 15.5 K and (ii) the appearance of an anomalous Hall effect at T_{N2} ≈ 4.7 K. Possible scenarios of the AF ground state formation are discussed.
The specific heat of high quality La^{N}B_{6} (N=10, 11, natural) single crystals is investigated in a wide range of temperatures 2 - 300 K. The obtained data allow to estimate correctly (i) the electronic γ· T term of specific heat (γ ≈ 2.4 mJ/(mol·K^{2})), (ii) the contribution from quasilocal vibrating mode of La^{3+} ions (Θ_{E} ≈ 150 - 152 K), (iii) the Debye-type term from rigid boron cages (Θ_{D} ≈ 1160± 40 K). Our data also suggest an additional defect-mode component (iv) which may be attributed to a contribution of 1.5% boron vacancies in LaB_{6}. The obtained results may be interpreted in terms of formation of two level systems, which appear when La^{3+} ions are displaced from their centrosymmetric positions in the cavities of rigid boron cages, apart from randomly distributed boron vacancies in the LaB_{6} matrix.
The anisotropy of charge transport was investigated in the antiferromagnetic II state of GdB₆ from precise measurements of transverse magnetoresistance. Based on the data obtained we detected a complicated behavior of magnetoresistance curves which are characterized by the appearance of considerable hysteresis on the field and angular dependences below T_{N2}. Moreover it was shown that the system GdB₆ is sensitive to cooling-warming prehistory. The data analysis allowed to reconstruct magnetic H-T phase diagram of GdB₆ along main crystallographic directions (H||⟨001⟩,⟨110⟩,⟨111⟩) and to propose additional phase transition inside AF II phase at H₁ ≈ 0.5 T.
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