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Planar Optical Waveguides for Application in Optoelectronic Gas Sensors

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Golaszewska K., Kamińska E., Pustelny T., Struk P., Piotrowski T., Piotrowska A., Ekielski M., Kruszka R., Wzorek M., Borysiewicz M., Pasternak I., Gut K.

Acta Physica Polonica A

2008

vol. 114

issue 6A

A-223-A-230

In the paper, the results of technological investigations on planar optical waveguides based on high band gap oxide semiconductors were presented. Investigations concerned the technologies of depositing very thin layers of: zinc oxide ZnO, titanium dioxide TiO_2 and tin dioxide SnO_2 on substrates of quartz glass plates. There were investigated both morphological structures of the produced layers and their optical properties. The paper also presents investigations on the technology of input-output light systems in the Bragg grating structures.

Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

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Guziewicz M., Slysz W., Borysiewicz M., Kruszka R., Sidor Z., Juchniewicz M., Golaszewska K., Domagala J., Rzodkiewicz W., Ratajczak J., Bar J., Wegrzecki M., Sobolewski R.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-76-A-79

We report fabrication and characterization of ultrathin NbN and NbTiN films designed for superconducting photodetectors. Our NbN and NbTiN films were deposited on Al_2O_3 and Si single-crystal wafers by a high-temperature, reactive magnetron sputtering method and, subsequently, annealed at 1000°C. The best, 18 nm thick NbN films deposited on sapphire exhibited the critical temperature of 15.0 K and the critical current density as high as ≈ 8 × 10^6 A/cm^2 at 4.8 K.

Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry

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Guziewicz M., Jung W., Grochowski J., Borysiewicz M., Golaszewska K., Kruszka R., Baranska A., Piotrowska A., Witkowski B., Domagala J., Gryzinski M., Tyminska K., Stonert A.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-69-A-72

Electrical properties of RF magnetron sputtered p-NiO films were characterized after fabrication and after gamma irradiations using ^{137}Cs and ^{60}Co sources. Electrical parameters are obtained from the Hall measurements, impedance spectroscopy and C-V measurement of n-Si/p-NiO junction diodes. The results show that resistivity of the NiO film is gradually increased following after sequential irradiation processes because of the decrease in holes' concentration. Hole concentration of a NiO film decreases from the original value of 4.36 × 10^{16} cm^{-3} to 2.86 × 10^{16} cm^{-3} after ^{137}Cs γ irradiation with doses of 10 Gy. In the case of γ irradiation from ^{60}Co source, hole concentration of the film decreases from 6.3 × 10^{16}/cm^3 to 4.1 × 10^{16}/cm^3 and to 2.9 × 10^{16}/cm^3 after successive expositions with a dose of 20 Gy.

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3 Acta Physica Polonica A

2 2011

1 2008

3 Borysiewicz M.

3 Golaszewska K.

3 Kruszka R.

2 Domagala J.

2 Guziewicz M.

2 Piotrowska A.

1 Bar J.

1 Baranska A.

1 Ekielski M.

1 Grochowski J.

1 Gryzinski M.

1 Gut K.

1 Juchniewicz M.

1 Jung W.

1 Kamińska E.

1 Pasternak I.

1 Piotrowski T.

1 Pustelny T.

1 Ratajczak J.

1 Rzodkiewicz W.

1 Sidor Z.

1 Slysz W.

1 Sobolewski R.

1 Stonert A.

1 Struk P.

1 Tyminska K.

1 Wegrzecki M.

1 Witkowski B.

1 Wzorek M.

Search results

Planar Optical Waveguides for Application in Optoelectronic Gas Sensors

Technology of Ultrathin NbN and NbTiN Films for Superconducting Photodetectors

Capability of Semiconducting NiO Films in Gamma Radiation Dosimetry