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ZnO Thin Films Synthesized by Sol-Gel Process for Photonic Applications

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Znaidi L., Touam T., Vrel D., Souded N., Ben Yahia S., Brinza O., Fischer A., Boudrioua A.

Acta Physica Polonica A

2012

vol. 121

issue 1

165-168

Undoped and aluminum-doped ZnO thin films are prepared by the sol-gel process. Zinc acetate dihydrate, ethanol and monoethanolamine are used as precursor, solvent and stabilizer, respectively. In the case of Al-doped ZnO, aluminum nitrate nonahydrate is added to the precursor solution with an atomic percentage equal to 1 or 2 at.% Al. The multi thin layers are prepared by spin-coating onto glass substrates, and are transformed into ZnO upon annealing at 550°C. Films with preferential orientation along the c-axis are successfully obtained. The structural, morphological, and optical properties of the thin films as a function of aluminum content have been investigated for different elaboration parameters (e.g. layer number) using X-ray diffraction, atomic force microscopy, scanning electronic microscopy. Waveguiding properties of the thin films have been also studied using m-lines spectroscopy. The results indicate that our films are monomodes at 632.8 nm with propagation optical loss estimated around 1.6 dB/cm.

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1 Acta Physica Polonica A

1 2012

1 Ben Yahia S.

1 Boudrioua A.

1 Brinza O.

1 Fischer A.

1 Souded N.

1 Touam T.

1 Vrel D.

1 Znaidi L.

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ZnO Thin Films Synthesized by Sol-Gel Process for Photonic Applications