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Strong Electric Field Driven Carrier Transport Non-Linearities in n-Type GaAs/AlGaAs Superlattices

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Subačius L., Venckevičius R., Kašalynas I., Seliuta D., Valušis G., Schmidt J., Lisauskas A., Roskos H., Alekseev K., Köhler K.
Acta Physica Polonica A
|
2011
|
vol. 119
|
issue 2
167-169
EN
Nanosecond pulsed technique was used to study and discriminate strong electric field induced effects in carrier transport in silicon doped GaAs/Al_{0.3}Ga_{0.7}As superlattices at room temperature. The experiment shows that the superlattice can serve as gain media to employ parametric phenomena for microwave amplification.
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