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Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC

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Taube A., Gierałtowska S., Gutt T., Małachowski T., Pasternak I., Wojciechowski T., Rzodkiewicz W., Sawicki M., Piotrowska A.

Acta Physica Polonica A

2011

vol. 119

issue 5

696-698

Applicability of thin HfO_2 films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10^{12} eV^{-1} cm^{-2}) on HfO_2/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.

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1 Acta Physica Polonica A

1 2011

1 Gierałtowska S.

1 Gutt T.

1 Małachowski T.

1 Pasternak I.

1 Piotrowska A.

1 Rzodkiewicz W.

1 Sawicki M.

1 Taube A.

1 Wojciechowski T.

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Electronic Properties of Thin HfO_2 Films Fabricated by Atomic Layer Deposition on 4H-SiC