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Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors

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Fiedler J., Heera V., Voelskow M., Mücklich A., Reuther H., Skorupa W., Gobsch G., Helm M.

Acta Physica Polonica A

2013

vol. 123

issue 5

916-919

Superconducting layers in silicon and germanium are fabricated via gallium implantation through a thin SiO_2 cover layer and subsequent rapid thermal annealing. Gallium accumulation at the SiO_2/Si and SiO_2/Ge interfaces is observed but no pure gallium phases were found. In both cases superconducting transition occurs around 6-7 K which can be attributed to the metallic conducting, gallium rich interface layer. However, the superconducting as well as the normal-state transport properties in gallium overdoped silicon or germanium are different.

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1 Acta Physica Polonica A

1 2013

1 Fiedler J.

1 Gobsch G.

1 Heera V.

1 Helm M.

1 Mücklich A.

1 Reuther H.

1 Skorupa W.

1 Voelskow M.

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Superconducting Layers by Gallium Implantation and Short-Term Annealing in Semiconductors