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Monte Carlo Simulation of Dember Effect in n-InAs under Subpicosecond Laser Pulse Excitation

100%
Malevich V.
Acta Physica Polonica A
|
2005
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vol. 107
|
issue 1
169-173
EN
Monte Carlo method is used to simulate photo-Dember effect and generation of electromagnetic terahertz pulses in n-InAs excited by femtosecond laser radiation. Dynamics of electric field and transport of carriers were considered self-consistently. It is shown that, under excitation of semiconductor by laser pulses with photon energies<1.1 eV, the Dember photovoltage reaches a peak value (it can be in tens times larger than the typical Dember photo-electromotive force at stationary illumination) through 50-100 fs after excitation and then fades while oscillating with plasma frequency. Excitation of semiconductor by radiation with a greater photon energy (>1.1 eV) results in inter-valley transfer of photoelectrons and the photovoltage to decrease.
2
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Terahertz Generation from Femtosecond-Laser-Excited GaAs Surface Due to Electric-Field-Induced, Optical Rectification

51%
Malevich V., Ziaziulia P., Manak I.
Acta Physica Polonica A
|
2008
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vol. 113
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issue 3
887-890
EN
The dynamics of the depletion field screening induced by photoexcited carriers and THz generation caused by the electric-field-induced optical rectification are simulated for GaAs surface excited by femtosecond laser radiation on the basis of an ensemble Monte Carlo method. The results show that the photocarrier-induced screening occurs on a subpicosecond time scale and THz pulse essentially changes its wave form depending on excitation pulse duration and fluence. The possibility to use the depletion electric field induced THz generation for study of subpicosecond electric field screening dynamics is discussed.
3
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Terahertz Emission from the Surfaces of InAs and Other Narrow-Gap Semiconductors

45%
Adomavičius R., Krotkus A., Molis G., Urbanowicz A., Malevich V.
Acta Physica Polonica A
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2008
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vol. 113
|
issue 3
859-862
EN
THz pulses were used to investigate carrier dynamics in narrow-gap semiconductors. The measurement of the optically induced THz pulse absorption transients provided important insights into electron energy relaxation in the conduction band. In the second set of experiments, THz generation from the surfaces of various semiconductors was studied and compared. It was found that the most efficient THz emitters are semiconductors with a narrow band gap, large intervalley separation in the conduction band, and low nonparabolicity of the main valley.
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