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Simulation of Radiation Effects in SiO₂/Si Structures

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Komarov F., Zayats G., Komarov A., Miskiewicz S., Michailov V., Komsta H.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
857-860
EN
The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications.
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