An influence of static external electric and magnetic fields on donor states in a quantum well is studied by variational means. The energies of the 1s and 2p_{±} hydrogenic states were calculated for different structure parameters (well depth and width) and different fields applied. The calculated 1s-2p_{±} transition energies agree well with experimental data.
The problem of a hydrogenic donor in a semiconductor double quantum well under a homogeneous electric field is studied by variational means. The energy levels corresponding to the quantum states 1s, 2s, 2p have been calculated with the help of the many-element variational basis consisting of the exponential functions. The influence of the electric field on the donor binding energy is determined for different impurity positions. The 1s-2p transition energies have been calculated for a possible comparison with experiment.
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