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Photoemission and Inverse Photoemission Studies of SiO_{2}

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Sobczak A., Nietubyć R., Sobczak J. W.

Acta Physica Polonica A

1994

vol. 86

issue 5

837-843

Occupied and unoccupied electron states of amorphous silicon dioxide film supported on Si crystal are studied by using X-ray photoemission and, for the first time, X-ray inverse photoemission (X-ray bremsstrahlung isochromat method). A special care was undertaken to minimize decomposition of silicon oxide during X-ray bremsstrahlung measurements. The experimental spectra are compared with theoretical band structure calculations for amorphous SiO_{2} from the literature and good overall agreement is found.

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1 Acta Physica Polonica A

1 1994

1 Nietubyć R.

1 Sobczak A.

1 Sobczak J. W.

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Photoemission and Inverse Photoemission Studies of SiO_{2}