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Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells

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Malissa H., Jantsch W., Mühlberger M., Schäffler F., Wilamowski Z., Draxler M., Bauer P.

Acta Physica Polonica A

2004

vol. 105

issue 6

585-590

We investigate the spin resonance of electrons in one-sided modulation doped Si_{1-x}Ge_x (x=0-10%)) quantum wells defined by Si_{0.75}Ge_{0.25} barriers. In such structures, the Bychkov-Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble.

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1 Acta Physica Polonica A

1 2004

1 Bauer P.

1 Draxler M.

1 Jantsch W.

1 Malissa H.

1 Mühlberger M.

1 Schäffler F.

1 Wilamowski Z.

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Bychkov-Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells