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Planar Hall Effect in Ferromagnetic (Ga,Mn)As/GaAs Superlattices

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Wesela W., Wosiński T., Mąkosa A., Figielski T., Sadowski J., Terki F., Charar S.
Acta Physica Polonica A
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2007
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vol. 112
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issue 2
369-373
EN
The planar Hall effect was used for investigation of magnetic anisotropy in short period (Ga,Mn)As/GaAs superlattices epitaxially grown on (001) oriented GaAs substrate. The results confirmed the existence of low-temperature magnetocrystalline anisotropy in the superlattices with the easy magnetic axes directed along the two in-plane 〈100〉 directions. Attention is paid to the two-state behaviour of the planar Hall resistance at zero magnetic field that provides its usefulness for applications in non-volatile memory devices.
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