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Compact Modeling for Submicron Fully Depleted SOI MOSFET's

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Remmouche R., Boutaoui N., Bouridah H.
Acta Physica Polonica A
|
2012
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vol. 121
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issue 1
190-192
EN
In this paper, we have developed a novel compact charge-conservative model for fully depleted silicon-on-insulator MOSFETs and implemented it in SPICE3. Our model is valid for the DC, small-signal and large-signal simulations over a wide range of temperature. Simulations made using the model, following parameter extraction, are validated by comparison with experimental data.
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