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Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect

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Videlier H., Dyakonova N., Teppe F., Consejo C., Chenaud B., Knap W., Lusakowski J., Tomaszewski D., Marczewski J., Grabiec P.
Acta Physica Polonica A
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2011
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vol. 120
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issue 5
927-929
EN
We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
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