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Photoluminescence and Electron Paramagnetic Resonance Studies of Bulk GaN Doped with Gadolinium

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Lipińska Z., Pawłowski M., Żołnierowicz H., Wysmołek A., Palczewska M., Kamińska M., Twardowski A., Boćkowski M., Grzegory I.

Acta Physica Polonica A

2006

vol. 110

issue 2

243-248

Photoluminescence and electron paramagnetic resonance experiments on strain free GaN bulk crystals of wurtzite structure doped with gadolinium are reported. Efficient gettering of residual GaN donors by Gd was observed. Electron paramagnetic resonance showed that Gd ion incorporated into GaN lattice had Gd^{3+}(4f^7) configuration. The observed photoluminescence spectra were explained as due to intracenter Gd^{3+}(4f^7) transitions. No ferromagnetic behavior was detected.

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1 Acta Physica Polonica A

1 2006

1 Boćkowski M.

1 Grzegory I.

1 Kamińska M.

1 Lipińska Z.

1 Palczewska M.

1 Pawłowski M.

1 Twardowski A.

1 Wysmołek A.

1 Żołnierowicz H.

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Photoluminescence and Electron Paramagnetic Resonance Studies of Bulk GaN Doped with Gadolinium