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1

Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures

100%

Ochalski T., Żuk J., Regiński K., Bugajski M.

Acta Physica Polonica A

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1998

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vol. 94

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issue 3

463-467

EN

We report on photoreflectance investigations of strained-layer In_{0.2}Ga_{0.8}As/GaAs/Al_{0.3}Ga_{0.7}As single quantum well laser structures grown by molecular beam epitaxy. All the observed photoreflectance spectral features were assigned to the e-hh transitions with Δn=0. The transition energies were determined and compared to their values calculated within the envelope function approximation. Assuming that one third of the total strain in the central In_{0.2}Ga_{0.8}As layer is relaxed by biaxial deformation of surrounding thin GaAs layers, it is possible to explain reasonably the results of our photoreflectance experiment.

2

Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

100%

Ochalski T., Żuk J., Vlasukova L.

Acta Physica Polonica A

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1997

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vol. 92

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issue 5

935-939

EN

We present a study of detailed line shapes of photoreflectance spectra for Al_{0.3}Ga_{0.7} As/SI-GaAs epitaxial layers grown by MBE. All measurements were performed at 80 K under UHV conditions with a special care for the samples surface quality. A set of the photoreflectance spectra was collected for photon energies close to the GaAs and Al_{0.3}Ga_{0.7}As band gaps (E_{0}). The photoreflectance spectra originated in the vicinity of the Al_{0.3}Ga_{0.7}As/SI-GaAs interface were analyzed using the complex Airy function model of Franz-Keldysh oscillations. To examine the effect of the epitaxial layer thickness on parameters characterizing the interface, a step-by-step chemical etching was applied for stripping the top layers. The built-in electric field intensity, field inhomogeneity and phenomenological broadening parameter for interface regions were determined as a function of the epilayer thickness.

3

Resonant Cavity Enhanced Photonic Devices

88%

Bugajski M., Muszalski J., Ochalski T., Kątcki J., Mroziewicz B.

Acta Physica Polonica A

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2002

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vol. 101

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issue 1

105-118

EN

In the present paper we review our recent works on technology, basic physics, and applications of one-dimensional photonic structures. We demonstrate spontaneous emission control in In_xGa_{1-x}As/GaAs planar microcavities with distributed Bragg reflectors. In general, observed trends are in agreement with theoretical predictions. We also demonstrate the operation of resonant-cavity light emitting diodes and optically pumped vertical cavity light emitting diodes developed recently at the Department of Physics and Technology of Low-Dimensional Structures of the Institute of Electron Technology.

4

High power QW SCH InGaAs/GaAs lasers for 980-nm band

52%

Bugajski M., Mroziewicz B., Regiński K., Muszalski J., Kosiel K., Zbroszczyk M., Ochalski T., Piwoński T., Wawer D., Szerling A., Kowalczyk E., Wrzesińska H., Górska M.

Bulletin of the Polish Academy of Sciences: Technical Sciences

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2005

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vol. 53

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issue 2

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Photoreflectance Studies of InGaAs/GaAs/AlGaAs Single Quantum Well Laser Structures

Effect of Epitaxial Layer Thickness on Built-in Electric Field in Region of AlGaAs/SI-GaAs Interface: A Photoreflectance Study

Resonant Cavity Enhanced Photonic Devices

High power QW SCH InGaAs/GaAs lasers for 980-nm band