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Photoreflectance Measurements of InGaAs/GaAs Quantum Wells

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Tomaszewicz T., Korona K., Bożek R., Baranowski J.
Acta Physica Polonica A
|
1996
|
vol. 90
|
issue 5
965-968
EN
Samples with InGaAs/GaAs quantum wells were grown by metallo-organic chemical vapour deposition in order to detect and analyze GaSb islands deposited on the surface. Results of photoreflectance measurements of quantum wells are reported. The correspondence between broadening of quantum well transition lines and GaSb structures has been observed.
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