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DLC Coatings by PI^{3}D: Low-Voltage žersus High-Voltage Biasing

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Ryoo H., Nikiforov S., Rim G., Shenderey S., Oh H., Chung S.

Acta Physica Polonica A

2009

vol. 115

issue 6

1146-1148

Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition (PI^{3}D) processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.

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1 Acta Physica Polonica A

1 2009

1 Chung S.

1 Nikiforov S.

1 Oh H.

1 Rim G.

1 Ryoo H.

1 Shenderey S.

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DLC Coatings by PI^{3}D: Low-Voltage žersus High-Voltage Biasing