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1
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Characterization of Defect Centres in Semiconductors by Advanced ENDOR Techniques

100%
Gregorkiewicz T., Altink H., Ammerlaan C.
Acta Physica Polonica A
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1991
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vol. 80
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issue 2
161-170
EN
The advanced magnetic resonance techniques and their application to the studies of defects in semiconductors will be reviewed. Transient and stationary ENDOR, optically detected ENDOR and double ENDOR variations will be briefly discussed while special attention will be given to the Field-Stepped-ENDOR technique. The successful application of the advanced ENDOR techniques for the structure determination of complex defects will be illustrated by the examples concerning the boron-vacancy complex and thermal donors in silicon and the gallium vacancy in gallium phosphide.
2
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Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon

100%
Kaczor P., Godlewski M., Gregorkiewicz T.
Acta Physica Polonica A
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1993
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vol. 84
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issue 3
555-558
EN
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
3
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Photo-EPR Investigations of Thermal Donors in Silicon

100%
Bagraev N., Bekman H., Gregorkiewicz T., Ammerlaan C.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
397-400
EN
Two thermal donor related EPR centers Si-NL8 and Si-NL10 were studied by the photo-EPR technique. The spectral dependence of the intensity of the EPR signals was determined for the region from 0.6 to 1.4 eV in several samples with different Fermi level position. The quenching of the Si-NL8 signal with the coinciding enhancement of the Si-NL10 signal has been observed with possible indication of some metastable behavior of the NL8 center. For the heavily aluminum doped material strong generation of photocurrent upon band gap illumination has been observed. The results of the study provide further evidence for mutal correlation of both thermal donor related EPR centers since the observed spectral dependences could be understood by relating both NL8 and NL10 spectra to different paramagnetic states of basically the same center.
4
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Paramagnetic State of Hydrogen-Passivated Double-Donor Centers in Silicon

100%
Gregorkiewicz T., Zevenbergen I., Martynov Y., Ammerlaan C.
Acta Physica Polonica A
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1995
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vol. 88
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issue 4
735-738
EN
Hydrogenation of two double donor centers in silicon - substitutional sulfur and thermal donor - is studied by electron paramagnetic resonance and electron-nuclear double resonance. For both centers the existence of a new paramagnetic S = 1/2 state identified as the neutral charge state of the double donor passivated with a single hydrogen atom is concluded. The microscopic structure of such complexes is discussed.
5
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Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon

100%
Kaczor P., Kopalko K., Godlewski M., Gregorkiewicz T.
Acta Physica Polonica A
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1992
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vol. 82
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issue 4
677-680
EN
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
6
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Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon

100%
Kopalko K., Kaczor P., Godlewski M., Gregorkiewicz T.
Acta Physica Polonica A
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1991
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vol. 80
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issue 3
345-348
EN
Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD^{+} . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
7
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Free Carriers Heating at Mn^{2+} Magnetic Resonance in CdMnTe

88%
Godlewski M., Gałązka R., Tsimperidis I., Gregorkiewicz T., Ammerlaan C.
Acta Physica Polonica A
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1995
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vol. 87
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issue 1
177-180
EN
The results of optically detected magnetic and cyclotron resonance ex­periments performed on Cd_{1-x}Mn_{x}Te (x = 0.007) are presented. It is shown that the Mn^{2+} magnetic resonance results in heating of free holes, which can be observed via the effects of hot holes on the CdMnTe "edge" emission.
8
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Neutron Transmutation Doped GaP: Optically Detected Magnetic Resonance Studies

88%
Heijmink Liesert B., Godlewski M., Gregorkiewicz T., Ammerlaan C., Goldys E.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
401-404
EN
The first direct proof for successful neutron transmutation doping (NTD) of GaP is presented on the basis of optically detected magnetic resonance (ODMR). GaP:S samples grown by the liquid encapsulated Czochralski method were irradiated with thermal neutrons and subsequently annealed at 800°C. In the ODMR experiments the transmuted Ge substitutional on Ga sites was detected. The NTD process was also found to create deep acceptors, the nature of which will be tentatively discussed.
9
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Mechanism of Optical Detection of Magnetic Resonance in Cd_{1-x}Mn_{x}Te

76%
Godlewski M., Surma M., Gałązka R., Nguyen K., Gisbergen S., Gregorkiewicz T., Ammerlaan C.
Acta Physica Polonica A
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1992
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vol. 82
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issue 4
717-719
EN
The photoluminescence and optically detected magnetic resonance studies of Cd_{1-x}Mn_{x}Te (x = 0.095) are presented. The Mn^{2+} magnetic resonance is detected optically via the changes of "edge" emission induced by the decrease of the Mn spin system magnetization.
10
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Optically Detected Cyclotron Resonance Studies of High Eelectron Mobility AlGaAs/GaAs Structures

64%
Godlewski M., Monemar B., Anderson T. G., Tsimperidis I., Gregorkiewicz T., Ammerlaan C. A. J., Muszalski J., Kaniewska M.
Acta Physica Polonica A
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1995
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vol. 88
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issue 5
990-994
EN
Optically detected cyclotron resonance is used for the identification of recombination transitions of two-dimensional electron gas in A1GaAs/GaAs heterostructures. Two photoluminescence emissions are attributed to the recombination of the two-dimensional electron gas. These are the so-called H-band and the Fermi level singularity photoluminescence. Optical detection of cyclotron resonance is related to the change of the band bending across the GaAs active layer and the AlGaAs barrier, which is caused by impact ionization of shallow donors in the barrier region. Influence of a long range carrier scattering on ionized impurities on a mobility of the two-dimensional carriers is studied.
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