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This work reports results of studies on transport properties of single-layer devices based on polyazomethine thin films with different metal electrodes. Recorded I-V characteristics of Au-PPI-Au and Au-PPI-Al structures were analyzed in detail. It appears that I-V characteristics of Au-PPI-Au structures are consistent with the Mott-Gurney law with the mobility value of 2× 10^{-6} cm^2/(V s). Relatively low current in Au-PPI-Al devices is attributed to high value of the Schottky barrier and/or due to low density of longer conjugated segments in polyazomethine thin films.
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