This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)^{0/-} level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)^{-} state.
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