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Photoluminescence of Er^{3+} near 1.54μm in Silicon-Rich Silicon Oxide Films

100%

Kuritsyn D., Glukchanyuk V., Przybylińska H., Kozanecki A., Jantsch W.

Acta Physica Polonica A

2001

vol. 100

issue 3

437-442

Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. Silicon-rich silicon oxide was produced by high dose implantation of Si^+ ions into SiO_2 layers grown on silicon. Erbium doping was also performed using implantation of Er^+ ions at an energy of 800 keV. An evidence is presented that transfer of energy from defects related to excess silicon in silica is the dominant mechanism of excitation of Er^{3+} for optical pumping in the UV-blue wavelength range. Si-nanocrystals created by annealing at 1100ºC rather compete for excitation with erbium than transfer energy to Er^{3+}.

X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure

73%

Bąk-Misiuk J., Adamczewska J., Misiuk A., Regiński K., Wierzchowski W., Wieteska K., Kozanecki A., Kuritsyn D., Glukhanyuk W., Trela J.

Acta Physica Polonica A

2002

vol. 101

issue 5

689-699

The effect of treatment at up to 1270 K under hydrostatic argon pressure, up to 1.2 GPa, on strain relaxation of AlGaAs layers was investigated by X-ray diffraction and related methods. The 1.5μm thick AlGaAs layers were grown by molecular beam epitaxy method on 001 oriented semi-insulating GaAs substrate at 950 K. An increase in intensity of X-ray diffuse scattering, originating from hydrostatic pressure-induced misfit dislocations, was observed for all treated samples. For the samples treated at 920 K during 1 h under 0.6 GPa, the diffuse scattering was confined to the [110] crystallographic direction perpendicular to the direction of dislocations. For the samples treated at 1.2 GPa at the same temperature and time conditions as for 0.6G Pa, a different behaviour is observed, namely the diffuse scattering extends along all azimuthal directions, indicating that dislocations are created in both [110] and [¯110] directions. The change of strain after the treatment was most pronounced for the samples treated at 1.2 GPa for 1 h at 920 K.

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2 Acta Physica Polonica A

1 2002

1 2001

2 Kozanecki A.

2 Kuritsyn D.

1 Adamczewska J.

1 Bąk-Misiuk J.

1 Glukchanyuk V.

1 Glukhanyuk W.

1 Jantsch W.

1 Misiuk A.

1 Przybylińska H.

1 Regiński K.

1 Trela J.

1 Wierzchowski W.

1 Wieteska K.

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Photoluminescence of Er^{3+} near 1.54μm in Silicon-Rich Silicon Oxide Films

X-ray Study of Strain Relaxation in Heteroepitaxial AlGaAs Layers Annealed under High Hydrostatic Pressure