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Optical and Electrical Properties of High Temperature Annealed Heteroepitaxial GaN:Mg Layers

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Wojdak M., Baranowski J. M., Suchanek B., Pakuła K., Jun J., Suski T.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
1059-1062
EN
In this paper we present for the first time luminescence and electrical measurements of GaN:Mg heteroepitaxial layers annealed at very high temperatures up to 1500°C and at high pressures of nitrogen up to 16 kbar. The presence of high nitrogen pressure prevents GaN from thermal decomposition. It was found that annealing in the presence of additional Mg atmosphere leads to a high quality p-type epitaxial layer of the hole concentration equal to 2×10^{17} cm^{-3} and mobility 16 cm^{2}/(V s). However, annealing at high temperatures without additional magnesium causes conversion to n-type. It is also shown that in the high temperature annealed GaN:Mg epilayers the donor-acceptor luminescence is the dominant recombination channel.
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Two-Electron Transition in Homoepitaxial GaN Layers

100%
Fiorek A., Baranowski J., Wysmołek A., Pakuła K., Wojdak M., Grzegory I., Porowski S.
Acta Physica Polonica A
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1997
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vol. 92
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issue 4
742-744
EN
It is shown that the luminescence mapping is a powerful method to help identify optical transitions. Two-electron transition was identified in the homoepitaxial GaN layer by this technique. It was found that the donor and acceptor bound exciton emissions are spatially displaced and show intensity maxima at different places of the epitaxial layer. It was also found that the 3.45 eV line, suspected as "two-electron transition", follows exactly the donor bound exciton spatial distribution. Donor bound exciton recombines leaving the neutral donor in the excited 2s state. Thus, 1s-2s excitation being equal to 22 meV corresponds to 29 meV hydrogenic donor binding energy. This is the first identification of the two-electron transition in GaN.
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