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Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures

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Ievtushenko A., Lashkarev G., Lazorenko V., Karpyna V., Sichkovskyi V., Kosyachenko L., Sklyarchuk V., Sklyarchuk O., Bosy V., Korzhinski F., Ulyashin A., Khranovskyy V., Yakimova R.

Acta Physica Polonica A

2008

vol. 114

issue 5

1123-1129

Al/ZnO:N/Al and Ni/ZnO:N/Al diode photodetectors fabricated by dc magnetron sputtering of ZnO:N films on p-Si substrates are studied. The photocurrent-to-dark current ratio equal to 250 at λ= 390 nm and the time constant of photoresponse about 10 μs for Al/ZnO:N/Al structures with 4 μm interdigital spacing was achieved. The Ni/ZnO:N/Al diode structure has the rectification ratio ≈10² at bias 1 V, the maximal responsivity about 0.1 A/W is observed at 365 nm, and the measured time constant of photoresponse is about 100 ns.

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1 Acta Physica Polonica A

1 2008

1 Bosy V.

1 Ievtushenko A.

1 Karpyna V.

1 Khranovskyy V.

1 Korzhinski F.

1 Kosyachenko L.

1 Lashkarev G.

1 Lazorenko V.

1 Sichkovskyi V.

1 Sklyarchuk O.

1 Sklyarchuk V.

1 Ulyashin A.

1 Yakimova R.

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Ultraviolet Detectors Based on ZnO:N Thin Films with Different Contact Structures