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Surface Electronooptical Effects Connected with Gallium Doping of Cd_{0.85}Mn_{0.15}Te

100%
Kuźmiński S., Pater K., Szaynok A.
Acta Physica Polonica A
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1992
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vol. 81
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issue 2
309-313
EN
Surface photovoltage measurements performed for the Cd_{0.85}Mn_{0.15}Te single crystal samples intrinsic and gallium doped have shown influence of gallium doping on height and sign of the surface voltage barrier. From results of the surface photovoltage spectroscopy (SPS) measurements thevalues of acceptor, donor and manganese states energies have been determined. The photoconductivity (PC) measurements confirmed the effects found on the SPS curves.
2
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Surface Photovoltage Spectroscopy of Cd_{0.97}Fe_{0.03}Se and Cd_{0.97}Fe_{0.03}Te Crystals

100%
Sarem A., Οrlowski B. A., Kuźmiński S.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
183-186
EN
The surface electronic structure of the Cd_{1-x}Fe_{x}Se and Cd_{1-x}Fe_{x}Τe crystals with x = 0 and x = 0.03 has been studied by Surface Photovoltage Spectroscopy (SPS). The change of surface photovoltage was observed due to photo-excitation of the electrons from the deep donor state Fe 3d to conduction band edge. This gave possibility to determine energy position of the Fe 3d state at 0.64 and 0.15 eV over the top of the valence band for CdSe and CdTe, respectively.
3
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Energy States in the Surface Layer of Cd_{1-x}Mn_{x}Se for 0 ≤ x ≤ 0.10

100%
Kuźmiński S., Pater K., Szaynok A. T.
Acta Physica Polonica A
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1991
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vol. 79
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issue 2-3
191-194
EN
Surface photovoltage spectroscopy (SPS) measurements for Cd_{1-x}Mn_{x}Se single crystals between 80 and 300 K at the pressure of 10^{-4} Pa were performed. The Fermi level energy was calculated. From the SPS curves the energy values connected with the electron transitions have been determined. Four types of effects have been stated: energy gap, shallow states close to the conduction band and two energy states connected with the structural defects, the native ones and those related to introduction of manganese into the CdSe matrix.
4
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Deep Level Transient Spectroscopy Studies of CdMnTe

76%
Szatkowski J., Płaczek-Popko E., Hajdusianek A., Kuźmiński S., Bieg B., Becla P.
Acta Physica Polonica A
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1995
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vol. 87
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issue 2
387-390
EN
Deep levels in Ga doped n-type CdMnTe of 1% and 5% Mn contents and In doped n-type CdMnTe of 20% Mn content were studied using deep level transient spectroscopy technique. Our deep level transient spectroscopy results show presence of several groups of different traps.
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