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Crystallization in InGaAs/InP Heterostructures with a Strong Disorder

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Kovács G., Remenyi G., Gombos G., Savel'ev I. G., Kreshchuk A. M., Hegman N., Pödör B.
Acta Physica Polonica A
|
1995
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vol. 88
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issue 4
783-786
EN
Non-linear current-voltage characteristics were observed in the range of filling factors of 0.3 ≤ v ≤ 0.4 in a two-dimensional electron system in InGaAs/InP heterostructures with a strong disorder. The observations are explained qualitatively in terms of magnetic field induced localization and Wigner solidification.
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Activated Transport in Magnetic-Field Induced Insulating Phase in Two-Dimensional Electron Gas in InGaAs/InP Heterostructures

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Pődör B., Gombos G., Reményi G., Kovács G., Savel'ev I. G., Novikov S. V.
Acta Physica Polonica A
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1997
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vol. 92
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issue 5
945-949
EN
We report on experiments on low temperature (millikelvin range) activated magnetotransport on low-density two-dimensional electron systems in InGaAs/InP for Landau level filling factors 0.25 ≤ ν ≤ 0.55. The activation energy increases approximately linearly with decreasing filling factor. The observations are discussed in the light of the formation of the Wigner solid.
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