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Charge Carrier Heating Effect in Porous Silicon Structures Investigated by Microwaves

100%

Gradauskas J., Šatkovskis E., Česnys A., Stupakova J., Sužiedėlis A.

Acta Physica Polonica A

2008

vol. 113

issue 3

993-996

Diode-like samples, containing porous silicon structures, were investigated by microwave radiation pulses. The resistance of the samples and electromotive force arising over the samples placed in a section of waveguide was measured. Reduction of resistance of the samples was observed with increase in microwave power. More complicated shape of the electromotive force dependence on pulse power was found. It is shown that both effects could be explained by models based on a concept of carrier heating by microwave radiation.

Photoresponse of Porous Silicon Structures to Infrared Radiation

86%

Samuolienė N., Širmulis E., Stupakova J., Gradauskas J., Zagadskij V., Šatkovskis E.

Acta Physica Polonica A

2011

vol. 119

issue 2

137-139

Photoresponse of silicon samples containing porous structures have been studied under the action of CO_2 laser radiation. The signal shape and its behavior under the applied bias voltage revealed the existence of two heterojunctions on the border of porous-crystalline silicon and on the border between the porous layers of different porosity. The photosignal is recognized to be composed of hot hole photoemfs induced across the heterojunctions.

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2 Acta Physica Polonica A

1 2011

1 2008

2 Gradauskas J.

2 Stupakova J.

2 Šatkovskis E.

1 Samuolienė N.

1 Sužiedėlis A.

1 Zagadskij V.

1 Česnys A.

1 Širmulis E.

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Charge Carrier Heating Effect in Porous Silicon Structures Investigated by Microwaves

Photoresponse of Porous Silicon Structures to Infrared Radiation