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Local Structure Around Te in Heavily Doped GaAs:Te using X-Ray Absorption Fine Structure

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Pietnoczka A., Bacewicz R., Slupinski T., Antonowicz J., Wei S.-H.
Acta Physica Polonica A
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2012
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vol. 121
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issue 4
879-882
EN
The annealing of heavily doped GaAs:Te can significantly change the free electron concentration in a reversible manner. These changes of electrical properties are accompanied by the structural changes of GaAs:Te solid solution. We used X-ray Absorption Fine Structure at K-edge of tellurium to determine local changes around Te atoms for different states of the GaAs:Te crystals caused by the annealing corresponding to different electron concentrations. The best EXAFS fit for the samples with high electron concentration was obtained for the substitutional Te_{As} model with elongated Te-Ga bonds (as compared to the As-Ga distance). For the samples in the low concentration state the best fit was for the pairs of Te atoms forming a rhombohedral symmetry double-DX centre, with the proportional admixture of the substitutional tellurium
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