The influence of screening by confined free electrons on the exciton binding energy in the asymmetric double quantum well is calculated for various values of applied electric field perpendicular to the layer plane. The dependence of the exciton binding energy on carrier concentration is found to be stronger for lower than for higher fields. The drop of field-dependent exciton energy is less remarkable at higher densities of free electrons. Calculations were performed at 10 and 300 K, and up to densities of 10^{14} m^{-2} and 7 × 10^{14} m^{-2}, respectively.
We have calculated the structure of the valence bands and its dependence on the electric field and the density of free carriers in a lattice mismatched single and double quantum well. Our calculation is based on simultaneous solving of the effective mass equation for the envelope functions and Poisson's equation. The 6×6 Luttinger-Kohn Hamiltonian is diagonalized into two 3×3 blocks by a unitary transformation. We have shown how including the coupling between spin-orbit split-off band and light- and heavy-hole bands influences the shape of the valence bands. Further it has been found that at high densities of the free carriers and at non-zero electric field, the free-carrier screening affects the valence band structure and wave functions. This effect is considerably pronounced in double quantum well because of large spreading of the quantum states. The studying of the above effects is useful for band-structure engineering.
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