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Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

100%

Kaczmarski J., Taube A., Dynowska E., Dyczewski J., Ekielski M., Kamińska E., Piotrowska A.

Acta Physica Polonica A

2013

vol. 124

issue 5

855-857

In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of 12 cm^2/(Vs) has been demonstrated.

Response of ZnO/GaN Heterostructure to Ion Irradiation

84%

Barcz A., Pągowska K., Kozubal M., Guziewicz E., Borysiewicz M., Dyczewski J., Jakieła R., Ratajczak J., Snigurenko D., Dynowska E.

Acta Physica Polonica A

2015

vol. 128

issue 5

832-835

In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage production mechanism and possible ion mixing. 100 nm or 200 nm thick ZnO epitaxial layers were grown on GaN substrates by either sputter deposition or atomic layer deposition technique followed by adequate annealing. Ion irradiations of ZnO/GaN were carried out at room temperature using 200 keV Al⁺ ions with fluences of 2×10¹⁵ and 10¹⁶ at./cm². Unprocessed and irradiated samples were characterized by the Rutherford backscattering spectrometry in channeling geometry (RBS\c), X-ray diffraction and transmission electron microscopy. Additionally, secondary ion mass spectrometry was employed for the aforementioned samples as well as for the implanted samples subjected to further annealing. It was found that the damage distributions in ZnO/GaN differ considerably from the corresponding defect profiles in the bulk ZnO and GaN crystals, most probably due to an additional strain originating from the lattice mismatch. Amount of intermixing appears to be relatively small; apparently, efficient recombination prevents foreign atoms to relocate to large distances.

Analysis of Crystal Lattice Deformation by Ion Channeling

68%

Jóźwik P., Sathish N., Nowicki L., Jagielski J., Turos A., Kovarik L., Arey B., Shutthanandan S., Jiang W., Dyczewski J., Barcz A.

Acta Physica Polonica A

2013

vol. 123

issue 5

828-830

A model of dislocations has been developed for the use in Monte Carlo simulations of ion channeling spectra obtained for defected crystals. High resolution transmission electron microscopy micrographs show that the dominant type of defects in the majority of ion irradiated crystals are dislocations. The RBS/channeling spectrum is then composed of two components: one is due to direct scattering on randomly displaced atoms and the second one is related to beam defocussing on dislocations, which produce predominantly crystal lattice distortions, i.e. bent channels. In order to provide a correct analysis of backscattering spectra for the crystals containing dislocations we have modified the existing Monte Carlo simulation code "McChasy". A new version of the code has been developed by implementing dislocations on the basis of the Peierls-Nabarro model. Parameters of the model have been determined from the high resolution transmission electron microscopy data. The newly developed method has been used to study the Ar-ion bombarded SrTiO_3 samples. The best fit to the Rutherford backscattering/channeling spectra has been obtained by optimizing the linear combination of two kinds of defects: displaced atoms and bent channels. The great virtue of the Monte Carlo simulation is that unlike a traditional dechanneling analysis it allows quantitative analysis of crystals containing a mixture of different types of defects.

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3 Acta Physica Polonica A

1 2015

2 2013

3 Dyczewski J.

2 Barcz A.

2 Dynowska E.

1 Arey B.

1 Borysiewicz M.

1 Ekielski M.

1 Guziewicz E.

1 Jagielski J.

1 Jakieła R.

1 Jiang W.

1 Jóźwik P.

1 Kaczmarski J.

1 Kamińska E.

1 Kovarik L.

1 Kozubal M.

1 Nowicki L.

1 Piotrowska A.

1 Pągowska K.

1 Ratajczak J.

1 Sathish N.

1 Shutthanandan S.

1 Snigurenko D.

1 Taube A.

1 Turos A.

Search results

Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors

Response of ZnO/GaN Heterostructure to Ion Irradiation

Analysis of Crystal Lattice Deformation by Ion Channeling