Search results

Sort By:

Limit search:

Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface

100%

Lundström T., Bergman J. P., Holtz P. O., Monemar B., Campman K., Merz J. L., Gossard A. C.

Acta Physica Polonica A

1997

vol. 92

issue 4

824-828

We have theoretically and experimentally investigated the radiative recombination process in an n-type modulation doped GaAs/Al_{0.35}Ga_{0.65}As heterostructure. The dynamical reshaping of the potential profile across the heterojunction, and the decay of the spatially indirect radiative recombination between electrons in the two-dimensional electron gas and photo-created holes, have been numerically simulated for various values of the electric field across the heterojunction. Optical matrix elements were deduced from a self-consistent solution of the coupled Schrodinger and Poisson equations at every discrete point of time. The calculated recombination energies and integrated luminescence intensities were compared with experimental data from time-resolved photoluminescence measurements on an 800 Å wide GaAs/AlGaAs heterostructure.

Refine search results

1 Acta Physica Polonica A

1 1997

1 Bergman J. P.

1 Campman K.

1 Gossard A. C.

1 Holtz P. O.

1 Lundström T.

1 Merz J. L.

1 Monemar B.

Search results

Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface