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The Role of Internal Electric Fields in III-N Quantum Structure

100%

Perlin P., Łepkowski S., Teisseyre H., Suski T., Grandjean N., Massies J.

Acta Physica Polonica A

2001

vol. 100

issue 2

261-270

Binary nitrides: of wurtzite GaN, AlN, InN, and their solid solutions represent a family of semiconductors of crucial importance for modern optoelectronics. Strained quantum wells, like GaN/AlGaN and specially InGaN/GaN, form active layers of the light emitters working in green-UV part of the spectrum. The operation of these devices strongly depends on the emission spectra of considered quantum structures which are greatly influenced by the presence of built-in electric fields. The electric field acting via quantum confined Stark effect in the mentioned structures changes the energies and intensity of the emitted light. The effect can lead to the spectral shift of a photo- and electroluminescence by many hundreds of meV. In this review we will briefly cover the influence of internal electric fields on both optical and electrical properties of nitride based heterostructures and quantum wells. We would like to draw reader's attention to the usefulness of high-pressure investigation in the study of electric fields in nitrides and to show how the interpretation of these experiments influences the way we calculate the electric fields in the quantum structures.

Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies

68%

Chwalisz B., Wysmołek A., Bożek R., Korona K., Stępniewski R., Knap W., Pakuła K., Baranowski J., Grandjean N., Massies J., Prystawko P., Grzegory I.

Acta Physica Polonica A

2003

vol. 103

issue 6

573-578

Exciton localization in GaN/AlGaN quantum well structures is studied by photoluminescence. An anomalous temperature behavior of the photoluminescence from the quantum well is observed. With increasing temperature the energy position of the excitonic emission line first decreases up to 20 K, then increases, reaching a maximum around 90 K, and then decreases again in the higher temperature range. The observed behavior is discussed in terms of localization at the interface potential fluctuations. It is argued that the temperature activated migration and subsequent release of the excitons from traps that occurs between 20 K and 90 K are responsible for the observed S-like shape of the energy dependence. The obtained results allow a direct characterization of the energy fluctuations present in GaN/AlGaN quantum wells grown by different techniques.

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2 Acta Physica Polonica A

1 2003

1 2001

2 Grandjean N.

2 Massies J.

1 Baranowski J.

1 Bożek R.

1 Chwalisz B.

1 Grzegory I.

1 Knap W.

1 Korona K.

1 Pakuła K.

1 Perlin P.

1 Prystawko P.

1 Stępniewski R.

1 Suski T.

1 Teisseyre H.

1 Wysmołek A.

1 Łepkowski S.

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The Role of Internal Electric Fields in III-N Quantum Structure

Localization Effects in GaN/AlGaN Quantum Well - Photoluminescence Studies