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Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications

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Krajewski T., Luka G., Smertenko P., Zakrzewski A., Dybko K., Jakiela R., Wachnicki L., Gieraltowska S., Witkowski B., Godlewski M., Guziewicz E.

Acta Physica Polonica A

2011

vol. 120

issue 6A

A-17-A-21

The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.

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1 Acta Physica Polonica A

1 2011

1 Dybko K.

1 Gieraltowska S.

1 Godlewski M.

1 Guziewicz E.

1 Jakiela R.

1 Krajewski T.

1 Luka G.

1 Smertenko P.

1 Wachnicki L.

1 Witkowski B.

1 Zakrzewski A.

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Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications