The influence of heavy ion irradiation on the magnetic properties of the spin-Peierls compound CuGeO_{3} has been investigated by means of the electron paramagnetic resonance, the spontaneous magnetization, and the low field ac susceptibility. The measurements were performed on the CuGeO_{3} single crystals before and after irradiation with 80 MeV oxygen ions in the wide temperature range of 2-300 K. It was found that the irradiation induced an increase in the EPR signal intensity, magnetization, and susceptibility of this material. It was also shown that the irradiation does not lead to a decrease in the spin-Peierls transition temperature and to the formation of an antiferromagnetic phase which is expected to appear in disordered spin-Peierls systems.
The research of the surface and the near-surface region of Cz-Si wafers irradiated with fast oxygen and neon ions of energy 4 MeV/u and dose 10^{14} particles/cm^{2} is presented. In our study several methods based on the Bragg case of X-ray diffraction using Ag K_{α_{1}}, as well as reflection high-energy electron diffraction and Nomarsky optical microscopy were used. It was shown that implantation with fast neon ions causes larger disturbances of silicon crystal structure than irradiation with oxygen ions.
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