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EN
We calculate the eigenfrequencies of bulk semiconductors using tight-binding total energy calculations of an ideal and a distorted lattice. We correlate the obtained energy change with the harmonic force constants appearing as parameters in the expansion of the potential energy of the crystal lattice in terms of the displacement. A good agreement of the calculated q = 0 optical vibrational modes with the experimental values for Si, Ge, GaAs and GaP bulk crystals is obtained. The influence of a surface on the force constants and the vibrational frequencies is studied.
EN
A unified description of confined optical LO, TO and interface phonons is given on the basis of vector "ghost" fields defined in the whole space. These fields are characterized by the relations for longitudinal and transversal fields. Real displacement fields are obtained by introducing confinement conditions. Interface charges and vortices appear due to this procedure.
EN
We discuss a theoretical model for the Zeeman splitting in dimension reduced structures consisting of semimagnetic semiconducting materials. The interplay of the magnetic field in different orientations with the confinement and strain induced symmetry reduction in quantum well structures is discussed. The coupling of valence band states of magnetic and nonmagnetic wells in asymmetric double quantum well structures is studied.
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Binding Energies of Excitons in Quantum Well Structures

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EN
Binding energies of excitons in quantum well structures have been studied by solving the time-dependent Schrödinger equation where the potential is made up by the confining quantum well potentials of arbitrary form and the Coulomb interaction between the electron and hole. The problem is solved without the usually assumed variational procedure and the separation ansatz for the confined electron and hole states. The wave functions for electrons and holes can be extracted from the exciton wave function and are used for the interpretation of the charge localization.
EN
The magnetooptical anisotropy in strained quantum well structures is studied theoretically. As the source of this anisotropy the magnetic field induced mixing of light and heavy hole states is found. The anisotropy is also found in the frame of the multiple-band envelope-function approximation studying the influence of the barrier material on electronic states in the quantum well.
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