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The Optical Properties of CuInSe_{2} Thin Films

100%
Fouad S., Youssef S.
Acta Physica Polonica A
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1992
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vol. 82
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issue 3
495-501
EN
The optical constants of vacuum deposited CuInSe_{2} thin films of different thicknesses (60-135 nm) were determined in the photon energy from 1.03 to 3.1 eV. It was found that both the refractive index n and the absorption index k are independent of the film thickness. The analysis of the experimental points of the refractive index revealed the existence of normal dispersion and fits Sellmeier dispersion formula for single oscillator model. Using the previous model the optical dielectric constant as well as the oscillator energy and dispersion parameter have been calculated. CuInSe_{2} is found to be a direct gap semiconductor with a gap energy of 1.03 eV. At energies well above the absorption edge, the absorption behaviour can be explained by the existence of a forbidden direct transition with the same direct energy gap and an indirect one with energy gap of 0.85 eV.
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Optical Properties of Thermally Deposited Bismuth Telluride in the Wavelength Range of 2.5-10 µm

81%
Morsy A., Fouad S., Hashem E., El-Shazly A.
Acta Physica Polonica A
|
1991
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vol. 80
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issue 6
819-825
EN
The optical constants (the refractive index n, the absorption index k and the absorption coefficient α) of Bi_{2}Te_{3} thin films were determined in the wave-lenght range of 2.5 to 10 µm. The shape of the absorption edge in Bi_{2}Te_{3} thin films has been determined from transmittance and reflectance measurements. The edge is of the form expected for direct transition corresponding to E_{g} = 0.21 eV. The optical constants were used to determine the high frequency dielectric constant ε_{0} = 58, the optical conductivity σ =σ_{1} + σ_{2} as well as the volume and surface energy loss functions. All these parameters were used to get some information about the intraband and interband transitions.
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