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Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment

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Baj M., Gryglas M., Jouault B., Maude D., Faini G., Gennser U., Cavanna A.

Acta Physica Polonica A

2006

vol. 110

issue 2

157-162

Resonant tunnelling via single impurities placed in a single barrier was experimentally studied. The typically observed structures in the current-voltage characteristics seem to be paired. Such a pair can be interpreted as ground and excited states of an impurity, related to X_{xy} and X_z valleys, which is in agreement with the results obtained for big mesas. However, it is not clear why X_{xy} states can be seen without any phonon participation.

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions

100%

Lewińska S., Gryglas-Borysiewicz M., Przybytek J., Baj M., Jouault B., Gennser U., Ouerghi A.

Acta Physica Polonica A

2011

vol. 119

issue 5

606-608

Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.

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2 Acta Physica Polonica A

1 2011

1 2006

2 Baj M.

2 Gennser U.

2 Jouault B.

1 Cavanna A.

1 Faini G.

1 Gryglas M.

1 Gryglas-Borysiewicz M.

1 Lewińska S.

1 Maude D.

1 Ouerghi A.

1 Przybytek J.

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Spectroscopy of a Single Si Donor by the Resonant Tunnelling Experiment

Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions