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Infrared Reflection of MnTe_2 under High Pressure

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Mita Y., Ishida Y., Kobayashi M., Endo S.
Acta Physica Polonica A
|
2008
|
vol. 113
|
issue 1
617-620
EN
The IR reflection measurements of MnTe_2 were performed at room temperature under various pressures. It is observed that the reflectivity increases at the pressure range of 8-25 GPa and becomes almost constant at the higher pressure. The carrier concentrations obtained from the reflectivity spectra at the highest pressure region are the order of 10^{22} cm^{-3}. Therefore it is concluded that pressure-induced semiconductor-metal transition occurs at the pressure range of 8-25 GPa.
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