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Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals

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Pakula K., Baranowski J. M., Stępniewski R., Wysmołek A., Grzegory I., Jun J., Porowski S., Sawicki M., Starowieyski K.

Acta Physica Polonica A

1995

vol. 88

issue 5

861-864

The homoepitaxial growth of GaN layers has been achieved for the first time. Bulk GaN single crystals which have been used as a substrate have been grown from diluted solution of atomic nitrogen in the liquid gallium at 1600°C and at nitrogen pressure of about 15-20 kbar. It is shown that a terrace growth of GaN epitaxial layer has been realized. The high quality of the GaN film has been confirmed by luminescence measurements. The analysis of donor-acceptor and exciton luminescence is presented.

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1 Acta Physica Polonica A

1 1995

1 Baranowski J. M.

1 Grzegory I.

1 Jun J.

1 Pakula K.

1 Porowski S.

1 Sawicki M.

1 Starowieyski K.

1 Stępniewski R.

1 Wysmołek A.

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Growth of GaN Metalorganic Chemical Vapour Deposition Layers on GaN Single Crystals