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Weak Localization and Electron-Electron Interaction in Si/SiGe Quantum Wells

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Prinz A., Stőger G., Brunthaler G., Bauer G., Ismail K., Meyerson B. S.
Acta Physica Polonica A
|
1995
|
vol. 88
|
issue 5
873-876
EN
A negative magnetoresistance is observed in Si/SiGe modulation doped heterostructures which is attributed to the single particle quantum interference (weak localization) effect. From analysis of the experimental data the electron phase coherence time τ_{ϕ} is extracted to follow a (aT + bT^{2} )^{-1} dependence. The evaluated prefactor α = 0.25 is below the theoretical limit of 0.5, but agrees with observations in Si and GaAs/AlGaAs heterostructures.
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