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Calculations of Native Defects and Impurities in Cubic GaN Including High Pressure Effects

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Gorczyca I., Svane A., Christensen Ν. E.

Acta Physica Polonica A

1995

vol. 88

issue 4

723-726

Using the Green-function matrix technique based on the linear muffin-tin orbital method in the atomic-spheres approximation we perform self-consistent calculations of the electronic structure for native defects and impurities in cubic GaN. Native defects as N and Ga vacancies and antisites and substitutional impurities: Zn, C and Ge in different charge states are investigated. Resulting positions of the defect levels are compared with tight-binding and pseudopotential calculations. High pressure behavior is also studied in comparison with some other theoretical and experimental data.

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1 Acta Physica Polonica A

1 1995

1 Christensen Ν. E.

1 Gorczyca I.

1 Svane A.

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Calculations of Native Defects and Impurities in Cubic GaN Including High Pressure Effects