The influence of the applied gate voltage on the coherent propagation of the conduction electrons through the InGaAs/InP core-multishell nanowires with the surrounding gate is considered. The solution of the three-dimensional Schrödinger equation within the effective mass approximation is found using the adiabatic method. The electrostatic potential distribution generated by the all-around gate is determined from the self-consistent procedure applied to the Schrödinger-Poisson problem. The Landauer-Büttiker formalism and quantum transmission boundary method are applied to calculate the transport properties of the considered nanosystem.
Calculations of the current-voltage characteristics of the core-multishell nanowires for different radii of the core and various thicknesses of the shells are presented. A role of the conducting core and shells in the coherent transport under the influence of the gate voltage is discussed.
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