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Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay

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Matulionis A., Liberis J., Matulionienė I., Šermukšnis E., Leach J., Wu M., Ni X., Morkoç H.

Acta Physica Polonica A

2011

vol. 119

issue 2

225-227

Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.

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1 Acta Physica Polonica A

1 2011

1 Leach J.

1 Liberis J.

1 Matulionienė I.

1 Matulionis A.

1 Morkoç H.

1 Ni X.

1 Wu M.

1 Šermukšnis E.

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Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay