Trap generation in amorphous SiO_{2} films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10^{19} e/cm^{-2} and injected current density in the range 2-300 μA/cm^{2} were determined and discussed.
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