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Effect of High Energy Ion Implantation on the Structure and Mechanical Properties of Aluminium Alloys

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Anishchik V., Poliak N., Ponaryadov V., Opielak M., Boiko O.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
291-294
EN
The effect of implantation of Ne⁺, Kr⁺, and Bi⁺ ions over the energy range 26-710 MeV on the structural-phase state and the mechanical properties of the aluminum-based alloys (Al-Cu, Al-Cu-Mg, Al-Cu-Zn, Al-Mn) was studied. The revealed peculiarities of variations in the structure, phase composition, and mechanical properties of aluminum alloys are attributed to the electron deceleration of ions making the principal contribution to the formation of radiation defects which enhance the diffusion processes in the targets.
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Structure and Physicomechanical Properties of Nanostructured (TiHfZrNbVTa)N Coatings after Implantation of High Fluences of N⁺ (10¹⁸ cm¯²)

100%
Pogrebnjak A., Bondar O., Borba S., Piotrowska K., Boiko O.
Acta Physica Polonica A
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2017
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vol. 132
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issue 2
217-221
EN
New classes of high-entropy alloys, which consist of at least 5 main elements with atomic concentrations 5-35 at.%, are under great interest in modern material science. It is also very important to explore the limits of resistance of high-entropy alloy nitrides to implantation by high-energy atoms. Structure and properties of nanostructured multicomponent (TiHfZrNbVTa)N coatings were investigated before and after ion implantation. We used the Rutherford backscattering, scanning electron microscopy with energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy and scanning transmission electron microscopy with local microanalysis, X-ray diffraction and nanoindentation for investigations. Due to the high-fluence ion implantation (N⁺, the fluence was 10¹⁸ cm¯²) a multiphase structure was formed in the surface layer of the coating. This structure consisted of amorphous, nanocrystalline and initial nanostructured phases with small sizes of nanograins. Two phases were formed in the depth of the coating: fcc and hcp (with a small volume fraction). Nitrogen concentration reached 90 at.% near the surface and decreased with the depth. Nanohardness of the as-deposited coatings varied from 27 to 34 GPa depending on the deposition conditions. However, hardness decreased to a value of 12 GPa of the depth of the projected range after ion implantation and increased to 23 GPa for deeper layers.
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Presence of Inductivity in (CoFeZr)_x(PZT)_{1-x} Nanocomposite Produced by Ion Beam Sputtering

100%
Kołtunowicz T., Żukowski P., Boiko O., Fedotov A., Larkin A.
Acta Physica Polonica A
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2015
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vol. 128
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issue 5
853-856
EN
This paper presents the investigations of the electrical properties of the (CoFeZr)_{x}(PZT)_{1-x} nanocomposite with the metallic phase content x=43.8 at.%, which was produced by ion beam sputtering. Such preparation took place under an argon atmosphere with low oxygen content with its partial pressure P_{O₂} = 2×10¯³ Pa. The measurements were performed using alternating current within the frequency range of 50 Hz-10⁵ Hz for measuring temperatures ranging from 238 K to 328 K. The (CoFeZr)_{43.8}(PZT)_{56.2} nanocomposite sample subjected to a 15 min annealing process in air at the temperature Tₐ=423 K demonstrates a phase angle of -90° ≤ θ ≤ 0° in the frequency range 50 Hz-10⁵ Hz. It corresponds to the capacitive type of conduction. In the frequency range 10⁴-10⁵ Hz sharp minima in selected conductivity vs. frequency characteristics occur, which corresponds to a current resonance phenomenon in RLC circuits. In case of a sample annealed at Tₐ=498 K the inductive type of conduction with 0° ≤ θ ≤ +90° occurs in a high frequency area. At the frequency f_{r} characterized by the phase angle θ = 0°, the capacity value reaches its local minimum. It indicates a voltage resonance phenomenon in conventional RLC circuits. The θ = +90° crossing in the frequency dependence of phase angle corresponds to the current resonance phenomenon, which is represented by a strong local minimum in the conductivity vs. frequency characteristics.
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